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| BSS 295 SIPMOS (R) Small-Signal Transistor * N channel * Enhancement mode * Logic Level * VGS(th) = 0.8...2.0V Pin 1 G Type Pin 2 D Marking Pin 3 S VDS 50 V ID 1.4 A RDS(on) 0.3 Package BSS 295 Type BSS 295 BSS 295 TO-92 SS 295 Ordering Code Q67000-S238 Q67000-S105 Tape and Reel Information E6288 E6325 Maximum Ratings Parameter Symbol Values Unit Drain source voltage Drain-gate voltage RGS = 20 k VDS V DGR 50 V 50 VGS Gate source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Continuous drain current TA = 24 C 20 Class 1 A 1.4 ID DC drain current, pulsed TA = 25 C IDpuls 5.6 Ptot Power dissipation TA = 25 C W 1 Data Sheet 1 05.99 BSS 295 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJA -55 ... + 150 -55 ... + 150 C 125 E 55 / 150 / 56 K/W Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 C V (BR)DSS V 50 - Gate threshold voltage VGS=VDS, ID = 1 mA V GS(th) 0.8 IDSS 1.4 2 Zero gate voltage drain current VDS = 50 V, VGS = 0 V, Tj = 25 C VDS = 50 V, VGS = 0 V, Tj = 125 C VDS = 30 V, VGS = 0 V, Tj = 25 C IGSS 0.1 8 - 1 50 100 A nA nA Gate-source leakage current VGS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-state resistance VGS = 10 V, ID = 1.4 A VGS = 4.5 V, ID = 1.4 A 0.25 0.45 0.3 0.5 Data Sheet 2 05.99 BSS 295 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance VDS 2 * ID * RDS(on)max, ID = 1.4 A gfs S 0.5 1.6 pF 320 425 Input capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Ciss Output capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Coss Crss 110 170 Reverse transfer capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz td(on) 50 75 ns Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50 tr 8 12 Rise time VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50 td(off) 20 30 Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50 tf 120 160 Fall time VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50 - 85 115 Data Sheet 3 05.99 BSS 295 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current TA = 25 C IS A 1.4 Inverse diode direct current,pulsed TA = 25 C ISM V SD - 5.6 V Inverse diode forward voltage VGS = 0 V, IF = 2.8 A - 1 1.5 Data Sheet 4 05.99 BSS 295 Power dissipation Ptot = (TA) Drain current ID = (TA) parameter: VGS 10 V 1.5 A 1.3 1.2 W 1.0 Ptot 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 20 40 60 80 100 120 C 160 ID 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 20 40 60 80 100 120 C 160 TA TA Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25C Drain-source breakdown voltage V(BR)DSS = (Tj) 60 V 58 V(BR)DSS 57 56 55 54 53 52 51 50 49 48 47 46 45 -60 -20 20 60 100 C 160 Tj Data Sheet 5 05.99 BSS 295 Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C 3.2 Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 0.9 a b c Ptot = 1W k ljh if ge VGS [V] a 2.0 A RDS (on) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 V 5.0 0.0 0.4 0.8 1.2 1.6 2.0 A 2.8 VGS [V] = a 2.5 2.0 b 3.0 c 3.5 d 4.0 e f 4.5 5.0 g 6.0 h i 7.0 8.0 j 9.0 k 10.0 ID 2.4 db c 2.5 3.0 3.5 4.0 4.5 5.0 6.0 7.0 8.0 9.0 10.0 2.0 d e f 1.6 g c h i j k d e f hi g j k 1.2 0.8 b l 0.4 a 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS ID Typ. transfer characteristics ID = f(VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS 2 x ID x RDS(on)max 4.5 A ID parameter: tp = 80 s, V DS2 x ID x RDS(on)max 2.2 S gfs 1.8 1.6 3.5 3.0 1.4 2.5 2.0 1.5 1.0 0.4 0.5 0.0 0 1 2 3 4 5 6 7 8 V VGS 1.2 1.0 0.8 0.6 0.2 0.0 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 A ID 4.0 Data Sheet 6 05.99 BSS 295 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 1.4 A, VGS = 10 V 0.75 Gate threshold voltage VGS (th) = (Tj ) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 0.65 RDS (on)0.60 0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 -60 -20 20 60 100 C 160 VGS(th) 3.6 3.2 2.8 98% typ 2.4 98% 2.0 1.6 1.2 typ 2% 0.8 0.4 0.0 -60 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 1 pF C Ciss A IF 10 0 10 2 Coss Crss 10 1 10 -1 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0 10 -2 0.0 5 10 15 20 25 30 V VDS 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Data Sheet 7 05.99 |
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